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Fs P To247 40A 650V Auto / Tube
ON Semiconductor
Igbt, N 72A, 1200V To-247; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:500W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-Rohs Compliant: Yes
ON Semiconductor
600 V IGBT in TrenchStop? and Fieldstop Technology with Soft, Fast Recovery Anti-Parallel EmCon 3 Diode, 30 A IC, -40 to 175 degC, PG-TO263-3-2, Reel, Green
Infineon
600 V IGBT in TrenchStop? and Fieldstop Technology with Soft, Fast Recovery Anti-Parallel EmCon 3 Diode, 12 A IC, -40 to 175 degC, PG-TO263-3-2, Reel, Green
Infineon
FS4TIGBT TO247 40A 650V
ON Semiconductor
IGBT 360V 44A 187W I2PAK
ON Semiconductor
IGBT, 360V, 17A, 1.58V, 300MJ, D
ON Semiconductor
IGBT WITH SIC COPACK DIODE IGBT
ON Semiconductor
TRENCH GATE FIELD-STOP 650 V 40
STMicroelectronics
600 V IGBT in TrenchStop? and Fieldstop Technology with Soft, Fast Recovery Anti-Parallel EmCon HE Diode, 80 A IC, -40 to 175 degC, PG-TO247-3, Tube, Green
Infineon