TPS78001 pdf datasheet

The TPS780 family of low-dropout (LDO) regulators offer the benefits of ultralow power (I_Q = 500nA), miniaturized packaging (2¡Á2 SON-6), and selectable dual-level output voltage levels. An adjustable version is also available, but does not have the capability to shift voltage levels.

The V_SET pin allows the end user to switch between two voltage levels on-the-fly through a microprocessor-compatible input. This LDO is designed specifically for battery-powered applications where dual-level voltages are needed. With ultralow I_Q (500nA), microprocessors, memory cards, and smoke detectors are ideal applications for this device.

The ultralow-power and selectable dual-level output voltages allow designers to customize power consumption for specific applications. Designers can now shift to a lower voltage level in a battery-powered design when the microprocessor is in sleep mode, further reducing overall system power consumption. The two voltage levels are preset at the factory through a unique architecture using an EPROM. The EPROM technique allows for numerous output voltage options between V_SET low (1.5V to 4.2V) and V_SET high (2.0V to 3.0V) in the fixed output version only. Consult with your local factory representative for exact voltage options and ordering information; minimum order quantities may apply.

The TPS780 series are designed to be compatible with the TI MSP430 and other similar products. The enable pin is compatible with standard CMOS logic. This LDO is stable with any output capacitor greater than 1.0?F. Therefore, implementations of this device require minimal board space because of miniaturized packaging and a potentially small output capacitor. The TPS780 series I_Q (500nA) also come with thermal shutdown and current limit to protect the device during fault conditions. All packages have an operating temperature range of T_J = -40¡ãC to +125¡ãC. For more cost-sensitive applications requiring a dual-level voltage option and only on par I_Q, consider the TPS781 series, with an I_Q of 1.0?A and dynamic voltage scaling.